| 摘要 |
Provided are an ESD protecting device and a method for fabricating the same. The ESD protecting device includes a semiconductor substrate having a first conductivity type, the semiconductor substrate having a field region and an active region; first and second device isolation layers formed in the field region; a first impurity region and a second impurity region in the active region and isolated by the first device isolation layer, the first impurity region and the second impurity region both having a second conductivity type; a third impurity region isolated from the second impurity region by the second device isolation layer, the third impurity region having the first conductivity type; and a fourth impurity region formed in a portion of the semiconductor substrate below the first impurity region, the fourth impurity region having the first conductivity type and having a lower impurity concentration than the third impurity region.
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