发明名称 |
Memory device and method of manufacturing a memory device |
摘要 |
The invention relates to a method of forming a memory device comprising a memory cell array and a peripheral portion. When forming the capacitors in the memory cell array, a sacrificial layer is deposited which is usually made of silicon dioxide and which is used for defining the storage electrode above the substrate surface. The sacrificial layer is removed selectively from the array portion while being maintained in the peripheral portion. This is achieved by providing an array separation trench which acts as a lateral etch stop.
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申请公布号 |
US2007037334(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20050203927 |
申请日期 |
2005.08.15 |
申请人 |
MUEMMLER KLAUS;TEGEN STEFAN;BAARS PETER;REGUL JOERN |
发明人 |
MUEMMLER KLAUS;TEGEN STEFAN;BAARS PETER;REGUL JOERN |
分类号 |
H01L21/8234;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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