| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal oxide semiconductor dispersion body capable of realizing film forming, adhesion, stability of performance and high performance as an electrode. <P>SOLUTION: This is a manufacturing method of the treated metal oxide semiconductor particle dispersion body in which metal oxide semiconductor particles in which each of metal oxide semiconductor particles having average primary particle size of 3 nm or more and 50 nm or less contacts each other and forms a secondary particle structure having the average particle size of 50 nm or more and 300 nm or less in weight conversion distribution and a metal atomic complex containing a partial structure of the formula are made to contact in a solvent having water content of 10 wt.% or less. M expresses metal atoms of univalence to hexa valence, A, B express oxygen, nitrogen, phosphorus, and sulfur atoms, and X expresses an organic residue of divalence. <P>COPYRIGHT: (C)2007,JPO&INPIT |
