发明名称 |
Method for growing silicon single crystal and silicon wafer |
摘要 |
In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in a portion of a radial cross section of said silicon single crystal and at a pull rate which is slower than that to form an laser scattering tomography defect occurrence region, according to the Czochralski method. This silicon wafer is sampled from a straight body of the silicon single crystal grown using said method for growing a silicon single crystal, and the LPD density of LPD of 0.09 mum or greater in the surface after 10 times of repetitions of the SC-1 cleaning is 0.1/cm<SUP>2 </SUP>or less.
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申请公布号 |
US2007034138(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20060502609 |
申请日期 |
2006.08.09 |
申请人 |
ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA |
发明人 |
ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA |
分类号 |
C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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主权项 |
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地址 |
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