发明名称 Method for growing silicon single crystal and silicon wafer
摘要 In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in a portion of a radial cross section of said silicon single crystal and at a pull rate which is slower than that to form an laser scattering tomography defect occurrence region, according to the Czochralski method. This silicon wafer is sampled from a straight body of the silicon single crystal grown using said method for growing a silicon single crystal, and the LPD density of LPD of 0.09 mum or greater in the surface after 10 times of repetitions of the SC-1 cleaning is 0.1/cm<SUP>2 </SUP>or less.
申请公布号 US2007034138(A1) 申请公布日期 2007.02.15
申请号 US20060502609 申请日期 2006.08.09
申请人 ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA 发明人 ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA
分类号 C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 主分类号 C30B15/00
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