发明名称 |
Hybrid non-volatile memory device |
摘要 |
The present invention discloses a memory device that includes a first memory cell array for storing one or more codes; a second memory cell array for storing one or more data, which are updated substantially more frequently than the codes; and a third memory cell array for storing address mapping information that indicates one or more locations of one or more memory cells in the second memory cell array. The second memory cell array endures substantially more programming cycles than the first memory cell array does.
|
申请公布号 |
US2007036004(A1) |
申请公布日期 |
2007.02.15 |
申请号 |
US20050201247 |
申请日期 |
2005.08.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
CHIH YUE-DER;WANG CHIN-HUANG |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|