Metal-Insulator-Metal (MIM) Capacitors Formed Beneath First Level Metallization and Methods of Forming Same

摘要

A metal-insulator-metal (MIM) capacitor for an integrated circuit may be provided on the interlayer insulating layer and covered by a inter-metal dielectric (IMD) layer. This IMD layer has at least a first opening therein that exposes an upper surface of a first electrode of the MIM capacitor. This first opening is filled with a first copper damascene interconnect pattern, which may in some embodiments be part of a dual-damascene copper interconnect structure associated with a first and lowermost level of metallization (e.g., M1 wiring layer). This first copper damascene interconnect pattern may have an upper surface that is planar with an upper surface of the IMD layer and a bottom surface that is in contact with the upper surface of the first electrode of the MIM capacitor.