| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To design an exposure mask with high accuracy even for a rectangular or elliptic two-dimensional lens without increasing the amount of data. <P>SOLUTION: In the exposure mask, having a plurality of pattern arrangement regions PS arranged in a matrix so as to have equal pitches in the vertical and horizontal directions respectively on a mask region S corresponding to the one two-dimensional lens, and setting zero-order light transmittance with a size of an aperture arranged on each pattern arrangement region PS, for the purpose of forming the two-dimensional lens of which the diameters in the vertical and horizontal directions are different from each other (for example, a rectangular lens L1), a shape of the aperture arranged on each pattern arrangement region PS is made to be rectangular. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
