发明名称 FABRICATION METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To achieve a doping while reducing deteriorations in a filament, even when the multi-conditional doping is performed using an ion doping system equipped with the filament. SOLUTION: Upon completion of the ion doping, a material gas is stopped and a hydrogen or noble gas is made to flow. After hydrogen or the noble gas is made kept flowing, the filament temperature is dropped due to the lowering a filament current. As a result, a material gas around the filament can be replaced with hydrogen or the noble gas, when the filament temperature is dropped. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007043107(A) 申请公布日期 2007.02.15
申请号 JP20060172461 申请日期 2006.06.22
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIZUKA JUNICHI;OKI HIROSHI;HASEGAWA HIROSHI;GOTO MASAMI
分类号 H01L21/265;H01J27/08;H01J37/08;H01J37/317;H01L21/336;H01L29/786 主分类号 H01L21/265
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