| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of suppressing generation of a dark current. SOLUTION: This solid-state imaging device has a pixel 1 including an n-type impurity area 4 which is formed on a main surface of an n-type silicon substrate 2 and includes a transfer channels for electric charges, two transfer gate electrodes 8a and 8b which are provided on the main surface of the n-type silicon substrate corresponding to the n-type impurity area 4 at a specified intervals in a transfer direction of electric charges, and a p-type high-density impurity layer 5 which is provided projecting on the main surface of the n-type silicon substrate between the two transfer gate electrodes 8a and 8b. The two transfer gate electrodes 8a and 8b and p-type high-density impurity layer 5 are arranged overlapping with one another across an SiO<SB>2</SB>film 6 and an SiN film 7. COPYRIGHT: (C)2007,JPO&INPIT
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