DAMAGE-FREE ASHING PROCESS AND SYSTEM FOR POST LOW-K ETCH

摘要

A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical dimension. The ashing process comprises the use of a nitrogen and hydrogen containing chemistry with a passivation chemistry that includes oxygen, such as O<SUB>2</SUB>, CO, or CO<SUB>2</SUB>, or any combination thereof.