发明名称 Manufacturing method of semiconductor device having high efficiency
摘要 Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
申请公布号 KR100682872(B1) 申请公布日期 2007.02.15
申请号 KR20040103113 申请日期 2004.12.08
申请人 发明人
分类号 H01L33/00;H01L33/06;H01L33/10;H01L33/22;H01L33/32 主分类号 H01L33/00
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