| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose reliability is improved by restraining a semiconductor layer from becoming distorted, even when it receives physical stresses typified by resin sealing. SOLUTION: The semiconductor device comprises a semiconductor layer 10, a gate insulating layer 32 provided above the semiconductor layer 10, a gate electrode 34 provided above the gate insulating layer 32, and source region and drain region 38 provided to the semiconductor layer 10. A reinforcing layer 40 is provided in the semiconductor layer 10 vertically below the gate electrode 34. COPYRIGHT: (C)2007,JPO&INPIT
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