| 摘要 |
PROBLEM TO BE SOLVED: To evaluate the quality of an epitaxial layer and an SOI layer with high reliability. SOLUTION: In the silicon wafer having the epitaxial layer on a substrate, the quality of the epitaxial layer is evaluated by obtaining recombination life time. In the silicon wafer having an oxide film layer and the SOI layer on the substrate in this sequence, the quality of the SOI layer is evaluated by obtaining the recombination life time. The recombination life time of the epitaxial layer or the SOI layer is obtained by employing a first recombination life time measured after applying a first surface non-activation process with respect to the wafer, and a second recombination life time measured after applying a second surface non-activation process with respect to the wafer after measuring the first recombination life time. COPYRIGHT: (C)2007,JPO&INPIT
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