| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench gate structure which achieves both of an increase in a breakdown strength and a suppression of a surge voltage in good balance. SOLUTION: An n-type semiconductor layer 102 is formed on the upper of an n<SP>+</SP>-type semiconductor substrate 101. A p-type channel layer 103 is formed on the upper of the n-type semiconductor layer 102. A trench gate 2 is formed so as to penetrate the p-type channel layer 103 from the surface of the p-type channel layer 103 and reach the n-type semiconductor layer 102. The trench gate 2 is covered with a gate oxide film 3. An n<SP>+</SP>-type semiconductor area 106 is formed in the surface area of the p-type channel layer 103 so as to come into contact with a part of the side of the trench gate 2 through the gate oxide film 3. A depth B from the surface of the p-type channel layer 103 of the trench gate 2 is 1.2-1.5 times a depth A of the p-type channel layer 103. A depth C from the surface of the p-type channel layer 103 to the bottom of the gate oxide film 3 is 1.3 times or more the depth B. COPYRIGHT: (C)2007,JPO&INPIT
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