| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor in which the crystal orientation of each layer constituting a ferroelectric capacitor is favorably controlled, and to provide its manufacturing method and a ferroelectric memory. SOLUTION: The process for fabricating a ferroelectric capacitor 30 comprises steps (a) for forming a first crystalline barrier layer 14a, (b) for nitriding the first barrier layer 14a to form a second crystalline barrier layer 12a of nitride, (c) for forming a first electrode 32a above the second barrier layer 12a, (d) for forming a ferroelectric film 34a on the first electrode 32a, and (e) for forming a second electrode 36a on the ferroelectric film 34a. COPYRIGHT: (C)2007,JPO&INPIT
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