| 摘要 |
Provided is a CMOS (complementary metal oxide semiconductor) image sensor and a manufacturing method therof, In the method, a photodiode, an interlayer insulating layer, a color filter layer, and a planarizing layer are sequentially formed on a substrate. A photoresist is applied on the planarizing layer. The photoresist is selectively patterned to form a plurality of photoresist patterns. A surface of each photoresist pattern is hardened. The hardened photoresist patterns are reflowed to form microlenses.
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