发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, a display device, and their manufacturing technologies in which utilization efficiency of materials is enhanced and manufacturing process is simplified. SOLUTION: The manufacturing method includes a step of selectively forming a photocatalyst material or a material having an amino group by discharging a composition containing the photocatalyst material or the material having an amino group, immersing the photocatalyst material or the material having an amino group in a solution containing a plating catalyst meterial so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material having the amino group, and immersing the plating catalyst material in a plating solution containing a metal material so as to form a metal film on the surface of the photocatalyst material or the material having an amino group adsorbing or depositing the plating catalyst material. The pH of the solution containing the plating catalyst material is adjusted to be 3 or above, 6 or below. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007043113(A) 申请公布日期 2007.02.15
申请号 JP20060177955 申请日期 2006.06.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJII ITSUKI
分类号 H01L21/288;C23C18/18;H01L21/28;H01L21/3205;H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/288
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