SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a substrate processing apparatus wherein the temperature in a reaction tube can be controlled accurately. Specifically disclosed is a substrate processing apparatus comprising a reaction tube (42) in which a substrate is processed, a heater (46) for heating the substrate in the reaction tube (42), a cooling air channel (72) for flowing a cooling air (70) along the outer side of the reaction tube (42), and a thermocouple (82) for detecting the temperature around the reaction tube (42). The thermocouple (82) is covered with a protective tube (86) and arranged within the cooling air channel (72) in which the cooling air (70) is circulated, and a cover member (88) is provided on the outside of protective tube (86) for blocking the flow of the cooling air (70) toward the protective tube (86).