HIGH ELECTRON MOBILITY ELECTRONIC DEVICE STRUCTURES COMPRISING NATIVE SUBSTRATES AND METHODS FOR MAKING THE SAME

摘要

An electronic device structure comprises a substrate layer of semi-insulating Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>z</SUB>N, a first layer comprising Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>z</SUB>N, a second layer comprising Al<SUB>x</SUB>-Ga<SUB>y</SUB>In<SUB>z,</SUB>N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron gas is provided. A thin (<1000 nm) III-nitride layer is homoepitaxially grown on a native semi-insulating III-V substrate to provide an improved electronic device (e.g., HEMT) structure.