| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which microfabrication equipped with a gate insulating film having three of thicknesses is possible, and method of manufacturing the same. SOLUTION: The method includes: a step for forming a first gate insulating film 41 on the first to third active regions I to III of a silicon substrate 30; a step for performing wet etching on the first gate insulating film 41 of the second active region II through the first resist opening unit 38a of a first resist pattern 38c; a step for forming a second gate insulating film 42 on the second active region II; a step for forming a second resist pattern 45c having a second resist 45b larger than the first resist opening unit 38a on the silicon substrate 30; a step for performing the wet etching on the first gate insulating film 41 of the third active region III through the second resist opening unit 45a of second resist pattern 45c; and a step for forming a third gate insulating film 43 on the third active region III. COPYRIGHT: (C)2007,JPO&INPIT
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