| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for efficiently measuring electric characteristics of a wafer with high reliability when the quality of the silicon wafer is evaluated from its electrical characteristics measured by a mercury probe method. SOLUTION: A method of evaluating the quality of a silicon wafer by a mercury probe method comprises a process of keeping the wafer in an environment that a natural oxide film is not substantially formed on the surface of the wafer from a time of subjecting the substrate to hydrofluoric acid treatment until the surface of the silicon substrate is brought into contact with mercury. A method of evaluating the quality of the silicon substrate by measuring a plurality of points in its surface by the mercury probe method comprises a process of making the measurement in an environment that a natural oxide film is not substantially formed on the surface of the substrate. A method of evaluating the quality of the silicon wafer by the mercury probe method comprises processes of subjecting the silicon wafers to hydrofluoric acid treatment, storing the silicon wafer subjected to the hydrofluoric acid treatment in an environment that a natural oxide film is not substantially formed on the surface of the wafer, and successively subjecting the stored wafer to the measurement. COPYRIGHT: (C)2007,JPO&INPIT
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