| 摘要 |
A method for rapid thermal annealing of thin film layers is provided. The method directs a series of pulses or flashes of heat energy toward a targeted layer on a substrate. Each pulse may be at a first temperature range sufficient to anneal the targeted layer, but has a duration that is less than that necessary to render the targeted layer substantially annealed. Moreover, in succession, the series of pulses can incrementally raise the targeted layer to a temperature sufficient for annealing, while minimizing exposure of the remaining layers to the pulses of heat energy. A reactor for implementing the rapid thermal annealing process is also provided.
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