发明名称 Inductor fabricated with dry film resist and cavity and the method thereof
摘要 <p>An inductor fabricated with a dry film resist and a cavity and a method of fabricating the inductor. The cavity can be formed in a substrate to minimize a parasitic capacitance generated by structures of upper electrodes, an insulating layer, and a lower electrode and minimize energy loss caused by an eddy current generated through the substrate. Also, a process of forming and planarizing the cavity can be simplified so as to form the cavity to a sufficient depth. As a result, an inductor having a high quality factor and a high self resonant frequency can be fabricated. Also, a scheme for simply forming and planarizing a cavity is contemplated.</p>
申请公布号 KR100683866(B1) 申请公布日期 2007.02.15
申请号 KR20040101068 申请日期 2004.12.03
申请人 发明人
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
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