发明名称 Nonvolatile memory device, memory system, and operating methods
摘要 <p>This invention provides for a nonvolatile memory device, in particular a flash memory device, a corresponding memory system, and methods for operating such device and system. In exemplary embodiments, a pipelined burst read operation allows the device to support higher data transfer rates than are possible with prior art burst read flash memory devices. Preferably, the flash memory device supports both non-pipelined and pipelined read operations, with the read mode settable from a memory controller. </p>
申请公布号 EP1501100(A3) 申请公布日期 2007.02.14
申请号 EP20040016660 申请日期 2004.07.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, SOO-HWAN;PARK, JUNG-HOON
分类号 G11C16/06;G11C16/26;G11C7/10;G11C16/02 主分类号 G11C16/06
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