发明名称 A SYSTEM FOR ACCESSING NAND FLASH MEMORY AT RANDOM USING DUAL-PORT DRAM AND A CONTROLLER THEREOF
摘要 A random access system of a NAND flash memory using a dual-port DRAM and a control apparatus thereof are provided to improve data read and write performances of the NAND flash memory by enabling random access to the NAND flash memory. In a random access system of a NAND flash memory device(40) using a dual-port DRAM(20), data in a block unit is accessed to the NAND flash memory device. The dual-port DRAM has a first port and a second port, where the first port is connected to a host. A controller(30) is connected between the NAND flash memory and the dual-port DRAM, and reads data by a page unit from the NAND flash memory and then transmits the data to the dual-port DRAM when a read control signal is received from the host, and receives written data from the dual-port DRAM and then writes the data in the NAND flash memory by a page unit when a write control signal is received from the host. The controller operates according to a control signal of the host.
申请公布号 KR100685324(B1) 申请公布日期 2007.02.14
申请号 KR20070003592 申请日期 2007.01.12
申请人 MGINE CO., LTD. 发明人 SUH, WOON SIG
分类号 G11C16/02;G11C11/40 主分类号 G11C16/02
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