Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers,申请号EP20010129445-传众专利搜索

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发明名称	Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers
摘要
申请公布号	EP1220393(B1)	申请公布日期	2007.02.14
申请号	EP20010129445	申请日期	2001.12.10
申请人	FUJI PHOTO FILM CO., LTD.	发明人	FUKUNAGA, TOSHIAKI;OHGOH, TSUYOSHI
分类号	H01L21/205;H01S5/343;H01S5/20;H01S5/223;H01S5/34	主分类号	H01L21/205
代理机构		代理人
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