发明名称 |
Method of fabricating copper damascene and dual damascene interconnect wiring |
摘要 |
An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.
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申请公布号 |
US7176119(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040711456 |
申请日期 |
2004.09.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;HILL WILLIAM;MCAVEY, JR. KENNETH F.;MCDEVITT THOMAS L.;STAMPER ANTHONY K.;WINSLOW ARTHUR C.;ZWONIK ROBERT |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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