| 摘要 |
Provided is directed to a semiconductor memory device and a method of driving the same capable of improving a repair efficiency with comparison to the conventional method which repairs all the redundancy row even when a defective cell is occurred in only one cell, by including: a memory cell array which is comprised of at least more than one redundancy block and redundancy segment by means of dividing it into a plurality of blocks toward a row direction and then dividing the blocks into a plurality of segments; a control circuit for storing a repair information of a defective cell and for repairing the segment generating the defective cell to the redundancy segment according to the repair information by inputting a row address signal and a column address signal.
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