HIGHLY INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A high integrated semiconductor device and its manufacturing method are provided to single-crystallize a crystal structure of a semiconductor material being formed through a deposition process by performing an epitaxial process. A first conductive layer pattern(115) and a first semiconductor pattern(125) are formed on a semiconductor substrate(100). The first conductive layer pattern and the first semiconductor pattern expose the semiconductor substrate and are stacked in turn. The first semiconductor pattern is a noncrystalline structure. A second semiconductor layer(130) is formed on the resultant structure where the first semiconductor pattern is formed. The second semiconductor layer is a noncrystalline structure and contacted to the semiconductor substrate. An epitaxial process is performed by using the semiconductor substrate as a seed layer to change crystalline conditions of the second semiconductor layer and the first semiconductor pattern into a noncrystalline condition.