发明名称 |
Method for fabricating electronic device |
摘要 |
A method for fabricating an electronic device includes: a step of forming a first conductor to become a wiring or a wiring plug in a first insulating film; a step of forming a second insulating film on the first insulating film and the first conductor and, after that, forming a hole reaching the top face of the first conductor in the second insulating film; a step of forming a first barrier metal film on a bottom and side walls of the hole and on the second insulating film; a step of removing a portion formed on the bottom of the hole in the first barrier metal film to thereby expose the top face of the first conductor; a step of performing a plasma process using a reducing gas after the step of exposing the top face of the first conductor; and a step of forming a second conductor to become a wiring plug or a wiring by filling a conductive film in the hole after the step of performing the plasma process.
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申请公布号 |
US7176124(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040923827 |
申请日期 |
2004.08.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUMOTO SUSUMU |
分类号 |
H01L21/3065;H01L21/4763;H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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