发明名称 Method for fabricating electronic device
摘要 A method for fabricating an electronic device includes: a step of forming a first conductor to become a wiring or a wiring plug in a first insulating film; a step of forming a second insulating film on the first insulating film and the first conductor and, after that, forming a hole reaching the top face of the first conductor in the second insulating film; a step of forming a first barrier metal film on a bottom and side walls of the hole and on the second insulating film; a step of removing a portion formed on the bottom of the hole in the first barrier metal film to thereby expose the top face of the first conductor; a step of performing a plasma process using a reducing gas after the step of exposing the top face of the first conductor; and a step of forming a second conductor to become a wiring plug or a wiring by filling a conductive film in the hole after the step of performing the plasma process.
申请公布号 US7176124(B2) 申请公布日期 2007.02.13
申请号 US20040923827 申请日期 2004.08.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MATSUMOTO SUSUMU
分类号 H01L21/3065;H01L21/4763;H01L21/3205;H01L21/768;H01L23/52 主分类号 H01L21/3065
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