发明名称 |
Plasma treatment to improve barrier layer performance over porous low-K insulating dielectrics |
摘要 |
A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according to an overlying patterned resist layer; plasma treating according to a plasma process the etched opening to remove the resist layer and increase a surface density of the insulating dielectric layer within the etched opening; and, blanket depositing a barrier layer over the etched opening.
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申请公布号 |
US7176141(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040936272 |
申请日期 |
2004.09.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN SIMON;JANG SIMON;YU DOUGLAS |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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