发明名称 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
摘要 An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin to provide the junction with a specific contact resistance of less than or equal to approximately 1000 Omega-mum<SUP>2</SUP>, and in some cases a minimum specific contact resistance.
申请公布号 US7176483(B2) 申请公布日期 2007.02.13
申请号 US20040753504 申请日期 2004.01.07
申请人 ACORN TECHNOLOGIES, INC. 发明人 GRUPP DANIEL E.;CONNELLY DANIEL J.
分类号 H01L39/00;H01L21/285;H01L21/329;H01L21/336;H01L29/08;H01L29/45;H01L29/47;H01L29/78;H01L29/786;H01L29/812;H01L29/872 主分类号 H01L39/00
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