发明名称 Word line driving circuit of semiconductor memory device
摘要 Disclosed herein is a word line driving circuit in which sub-word lines are prevented from floating by using a sub-word line driver having two transistors. A plurality of sub-word line drivers is connected to one main word line. Each of the plurality of the sub-word lines includes a PMOS transistor and a NMOS transistor serially connected between a sub-word line driving voltage FX and a ground voltage. A floating prevention unit selects the main word line to a level of a threshold voltage using a driving signal having the level of the threshold voltage, thus preventing sub-word lines of a sub-word line driver, where the sub-word line driving voltage FX is off, from floating.
申请公布号 US7177226(B2) 申请公布日期 2007.02.13
申请号 US20050126677 申请日期 2005.05.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JONG CHERN
分类号 G11C8/00 主分类号 G11C8/00
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