Integrated resistive elements with silicidation protection

摘要

In a process for the fabrication of integrated resistive elements with protection from silicidation, at least one active area ( 15 ) is delimited in a semiconductor wafer ( 10 ). At least one resistive region ( 21 ) having a pre-determined resistivity is then formed in the active area ( 15 ). Prior to forming the resistive region ( 21 ), however, a delimitation structure ( 20 ) for delimiting the resistive region ( 21 ) is obtained on top of the active area ( 15 ). Subsequently, protective elements ( 25 ) are obtained which extend within the delimitation structure ( 20 ) and coat the resistive region ( 21 ).