发明名称 Semiconductor integrated circuit device and method of manufacturing the same
摘要 Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn-Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 mum is provided in the connecting member.
申请公布号 US7176056(B2) 申请公布日期 2007.02.13
申请号 US20020295908 申请日期 2002.11.18
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIYAKI YOSHINORI;SUZUKI HIROMICHI;KANEDA TSUYOSHI
分类号 H01L21/48;H01L23/50;H01L21/44;H01L21/607;H01L23/495 主分类号 H01L21/48
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