发明名称 |
Semiconductor integrated circuit device and method of manufacturing the same |
摘要 |
Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn-Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 mum is provided in the connecting member.
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申请公布号 |
US7176056(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20020295908 |
申请日期 |
2002.11.18 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MIYAKI YOSHINORI;SUZUKI HIROMICHI;KANEDA TSUYOSHI |
分类号 |
H01L21/48;H01L23/50;H01L21/44;H01L21/607;H01L23/495 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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