发明名称 |
Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 mum-square range of interest including the element region is 25% or more.
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申请公布号 |
US7176536(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040837748 |
申请日期 |
2004.05.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OYAMATSU HISATO;HONDA KENJI |
分类号 |
H01L21/28;H01L31/113;H01L21/285;H01L21/336;H01L21/44;H01L21/76;H01L21/822;H01L21/8234;H01L21/8238;H01L27/02;H01L27/04;H01L27/088;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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