发明名称 |
Method of forming a static random access memory with a buried local interconnect |
摘要 |
An SRAM cell includes six transistors. The storage nodes are implemented using local interconnects. A first level of metal overlies the interconnects but is electrically isolated therefrom. Contact plugs are formed to couple the cell to the first level of metal. The contact plugs are preferably formed in a different process step than the interconnects.
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申请公布号 |
US7176125(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040994908 |
申请日期 |
2004.11.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAW JHON-JHY |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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