| 摘要 |
A method for in-situ overlay accuracy checking using a first mask having a first pattern and a second mask having a second pattern to expose a layer of photosensitive material formed on a wafer. The first pattern and the second pattern are exposed in the layer of photosensitive material using the first mask, the second mask, and a photolithographic alignment and exposure system. The layer of photosensitive material is then developed and the relative position between the first pattern and the second pattern is analyzed.
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