发明名称 |
Semiconductor device |
摘要 |
It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
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申请公布号 |
US7176490(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20050087652 |
申请日期 |
2005.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO;DAIRIKI KOJI;SHIBATA HIROSHI;KOKUBO CHIHO;ARAO TATSUYA;HAYAKAWA MASAHIKO;MIYAIRI HIDEKAZU;SHIMOMURA AKIHISA;TANAKA KOICHIRO;YAMAZAKI SHUNPEI;AKIBA MAI |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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