发明名称 |
Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus |
摘要 |
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.
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申请公布号 |
US7176533(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040982113 |
申请日期 |
2004.11.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG EUN-AE;LEE MYOUNG-BUM;KIM YOUNG-PIL;KIM JIN-GYUN;JIN BEAN-JUN |
分类号 |
H01L21/28;H01L29/76;H01L21/225;H01L21/285;H01L21/768;H01L23/485 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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