发明名称 |
Bitline structure and method for production thereof |
摘要 |
The invention relates to a bit line structure having a surface bit line (DLx) and a buried bit line (SLx), the buried bit line (SLx) being formed in a trench with a trench insulation layer ( 6 ) and being connected to doping regions ( 10 ) with which contact is to be made via a covering connecting layer ( 12 ) and a self-aligning terminal layer ( 13 ) in an upper partial region of the trench.
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申请公布号 |
US7176088(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20030513163 |
申请日期 |
2003.08.08 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
KAKOSCHKE RONALD;SHUM DANNY;TEMPEL GEORG |
分类号 |
H01L21/336;H01L21/28;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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