发明名称 |
Semiconductor memory device, electronic card and electronic device |
摘要 |
A semiconductor memory device comprises a cell array including bit lines arranged at a uniform pitch; and a plurality of bit line selection transistors connected to respective bit line ends for selectively connecting the bit line to a sense amp. The bit line selection transistors are translationally arrayed in a direction perpendicular to the bit line at an average array pitch greater than eight times the pitch of the bit lines.
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申请公布号 |
US7177172(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20050172252 |
申请日期 |
2005.06.29 |
申请人 |
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发明人 |
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分类号 |
G11C5/06;G11C16/06;G11C16/04;H01L21/8246;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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