| 摘要 |
A method for manufacturing a semiconductor device is provided to improve a driving current of a CMOS semiconductor device by applying compression stress to a channel of a PMOS region and inducing tensile stress to a channel of an NMOS region. A gate electrode(130) is formed on a semiconductor substrate(100) having an NMOS region(N) and a PMOS region(P). A first TEOS(Tetra Ethyl Ortho Silicate film) layer, a first nitride layer, and a second TEOS layer are sequentially formed on the semiconductor substrate and the gate electrode. The first TEOS layer, the first nitride layer, and the second TEOS layer are etched to form a spacer(300a) on a sidewall of the gate electrode. Germanium ions(500) are implanted into the spacer formed on the sidewall of the gate electrode in the PMOS region.
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