发明名称 |
Controlled electroless plating |
摘要 |
An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.
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申请公布号 |
US7176133(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040994720 |
申请日期 |
2004.11.22 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HUES STEVEN M.;LOVEJOY MICHAEL L.;MATHEW VARUGHESE |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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