发明名称 |
Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material |
摘要 |
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10-25 mum and more particularly 15-18 mum, or a frequency ranging from 12-30 THz and more particularly 16.5-20 THz.
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申请公布号 |
US7176112(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20050112643 |
申请日期 |
2005.04.22 |
申请人 |
ATMEL CORPORATION |
发明人 |
LOJEK BOHUMIL;WHITEMAN MICHAEL D. |
分类号 |
H01L21/425;H01L21/22;H01L21/26;H01L21/42 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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