发明名称 |
Bi-modal halo implantation |
摘要 |
Methods of fabricating halo regions are provided. In one aspect, a method is provided of fabricating a first halo region and a second halo region for a circuit device of a first conductivity type and having a gate structure with first and second sidewalls. The first halo region of a second conductivity type is formed by implanting the substrate with impurities in a first direction toward the first sidewall of the gate structure. The second halo region of the second conductivity type is formed by implanting the substrate with impurities in a second direction toward the second sidewall of the gate structure. The first and second halo regions are formed without implanting impurities in a direction substantially perpendicular to the first and second directions.
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申请公布号 |
US7176095(B1) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040790939 |
申请日期 |
2004.03.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SULTAN AKIF;WU DAVID;QI WEN-JIE;FUSELIER MARK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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