发明名称 |
Power semiconductor device |
摘要 |
A power semiconductor device comprises a semiconductor layer; a polysilicon-containing gate; a first semiconductor region formed in said semiconductor layer at one surface of said semiconductor layer and operative to serve as at least one of a source region and an emitter region; a second semiconductor region formed in said semiconductor layer at the other surface of said semiconductor layer and operative to serve as at least one of a drain region and a collector region; a gate routing wire commonly connected to a plurality of said gates and including a polysilicon portion and a metal portion formed adjacent to it in the direction of plane of said semiconductor layer; an interlayer insulator film formed to cover said first semiconductor region, said gate routing wire and a plurality of said gates; an electrode portion formed in said interlayer insulator film and connected to said first semiconductor region; and a strap electrode plate located to cover said interlayer insulator on said gate routing wire and cover a plurality of said electrode portions and commonly connected to a plurality of said electrode portions.
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申请公布号 |
US7176521(B2) |
申请公布日期 |
2007.02.13 |
申请号 |
US20040834842 |
申请日期 |
2004.04.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAWAMURA KEIKO;MATSUDA NOBORU;EBUCHI YASUO |
分类号 |
H01L29/76;H01L29/78;H01L27/10;H01L29/739 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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