| 摘要 |
<p>A memory device and an OTFT(Organic Thin Film Transistor) are provided to reduce the size, to enhance flexible characteristics and to simplify manufacturing processes by applying a nano grain layer to a floating gate. An active layer(14) is electrically connected to source/drain electrodes(13). A floating gate(16) is insulated from the source/drain electrodes and the active layer. A first insulating layer(15) is used for insulating the active layer and the floating gate from each other. A control gate(18) is insulated from the source/drain electrodes, the active layer and the floating gate. At least one of the floating gate and the control gate includes at least one selected from a group consisting of a nano tube, a nano wire, a nano rod, and a nano ribbon.</p> |
