| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the degradation of device reliability due to a low threshold voltage and to improve a device speed by using a nonuniform gate insulating layer. A semiconductor substrate(201) are defined with a fin transistor region and a planar transistor region. Pad oxide and nitride layers for opening an isolation region of the substrate are formed on the resultant structure. A trench is formed by etching selectively the substrate using the pad nitride layer as an etch mask. An isolation(205) is formed in the trench. An active region is opened by etching selectively the isolation layer of the fin transistor region. The pad nitride layer is removed. The pad oxide layer is removed from the planar transistor region. A dielectric film(206) is formed at both sidewalls of the active region of the fin transistor region, on the pad oxide layer and on the active region of the planar transistor region. A gate conductive layer(208) is formed on the resultant structure to enclose the dielectric film. The dielectric film and the pad oxide layer are used as a gate insulating layer, so that the gate insulating layer has a nonuniform thickness.
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