| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where a wiring layer having high planarity can be obtained while an increase of manufacture cost is suppressed, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: The manufacturing method comprises a process for forming a seed metal layer 20a on a support substrate 70, a process for forming a wiring layer 10 comprising wiring 18 on the seed metal layer 20a, a process for removing the support substrate 70 after the wiring layer 10 is formed, and a process for patterning the seed metal layer 20a after the support substrate is removed so as to make wiring 20. <P>COPYRIGHT: (C)2007,JPO&INPIT |
